CVD Graphene
Chemical vapor deposition (CVD) is a chemical process widely used to grow high-quality, high-performance thin films. CVD graphene is created in two steps: Carbon atoms surface segregation and Carbon atoms surface deposition. CVD graphene is transferable onto various substrates, making the technique acceptable for several applications. Presently, CVD graphene synthesis is widely conducted utilizing transition metal substrates such as Ni and Cu as a catalyst. CVD graphene in different growth conditions exhibits various deformities, including the presence of hillocks, defects, grain boundaries and multilayers island formation.. Easily scalable CVD graphene can then be used for fundamental studies and in practical devices, like light-emitting diodes or mass-sensitive nano-electromechanical resonators. CVD graphene showing Hall-resistance quantization can be even used in metrology applications.
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Monolayer Graphene on SiO2/Si Substrate, Size: 2"
€269.001 piece/ 269 € 5 pieces/ 1094 € Please contact us for quotes on larger quantities !!! Monolayer Graphene on SiO2/Si Substrate Size: 2" Technical Properties of Graphene...NG01CG0101€269.00 -
Monolayer Graphene on SiO2/Si Substrate, Size: 4"
€423.001 piece/423 €5 pieces/1864 € Please contact us for quotes on larger quantities !!! Monolayer Graphene on SiO2/Si Substrate Size: 4", Grain Size: 6-10 μm Technical Properties of...NG01CG0103€423.00 -
Monolayer Graphene on SiO2/Si Substrate, Size: 3"
€324.001 piece/324 €5 pieces/1369 € Please contact us for quotes on larger quantities !!! Monolayer Graphene on SiO2/Si Substrate Size: 3", Grain Size: 6-10 μm Technical Properties of Graphene...NG01CG0102€324.00