Indium Arsenide (InAs) Wafers

Indium Arsenide (InAs) Wafers are provided in a size that is nominally 300 mm (11.8 inches) to 25.4 mm (1 inch). We produce wafers with the highest purity. Processes for the production of material include ultra-high purification techniques such as sublimation, crystallization and solid-state. A cylindrical ingot is created by this process which is sliced up and polished to form wafers. We offer single crystals that are created using 99.9999% pure indium and Arsenic in pure fused silica crucibles. The crystals have low defect density and high uniformity of electrical parameters, suitable for MOCVD or MBE epitaxial growth. Indium Arsenide (InAs) Wafers are created using high-pressure liquid encapsulated Czochralski process with EPD < 15000 cm-3 and they can be supplied to you as-cut, polished, ingot sections or etched wafers.